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ME 381R Fall 2003

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Pinch-Off & IV. 6. Joule Heating in. High-Field Devices. Localized heat generation. near the pinch-off point. 7. X-Y-Z. Actuator. Thermometry of Nanoelectronics ... – PowerPoint PPT presentation

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Title: ME 381R Fall 2003


1
ME 381R Fall 2003 Micro-Nano Scale Thermal-Fluid
Science and Technology Lecture
14 Electro-Thermal Simulation of Semiconductor
Devices
Dr. Li Shi Department of Mechanical Engineering
The University of Texas at Austin Austin, TX
78712 www.me.utexas.edu/lishi lishi_at_mail.utexas.
edu
2
MOSFET
3
Thermal Circuit
Particle transport theory
Fouriers law of heat conduction
4
Ideal MOSFET
VGgt0
5
Pinch-Off IV
6
Joule Heating inHigh-Field Devices
Localized heat generation near the pinch-off point
7
Thermometry of Nanoelectronics
Scanning Thermal Microscope
Atomic Force Microscope (AFM) Thermal
Probe
Laser
Deflection Sensing
Cantilever
Temperature Sensor
Sample
X-Y-Z Actuator
8
Microfabricated Probes
Pt Line
Tip
Pt-Cr Junction
Laser Reflector
SiNx Cantilever
Cr Line
Shi, Kwon, Miner, Majumdar, J. MicroElectroMechani
cal Sys., 10, p. 370 (2001)
9
Self Heating Effect on I-V
10
Optical Phonon Emission at High Field
11
Heat Transfer Path
12
Governing Equations for Electro-Thermal
Simulation of Devices
13
Example
14
Computation Scheme
15
Results
16
Electric Field
17
Electron Temperature
18
Phonon Temperature
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