Strained%20superlattice%20from%20SVT

1
Strained superlattice from SVT
Be doping
GaAs (5 nm)
GaAsP (3 nm)
14 pairs
GaAs (4 nm)
(2.5 µm)
GaAs P
0.36
0.64
p-type GaAs substrate
2
Quantum Efficiency

At bandgap I 6 muA/mW
3
Polarization
4
Analyzing power
Peak to peak A.P.
SVT superlattice A.P. 3
Spire strained layer A.P. 10
5
Conclusions

• Polarization at least as high as S.L. P 80
• QE is 5 times higher than S.L. QE 1
• Analyzing power smaller A.P. 3
• Wafer treatment different, under study
• Sample loaded in tunnel failed

Highs
Lows
6
Polarization uniformity
Uniform across a single chip