NEMS

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CMOS NEMS Platform
S.M.Rouhanie
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OUTLINE

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CMOS scaling issue Suggestions Selection of
NEMS Concepts of a mechanical switch Channel On/of
f current Sensor RGFET
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CMOS is Scaling, Power Density is Not
Subthreshold leakage Game Over for CMOS
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• many technologies being investigated to mitigate
  the
• problems due to increasing power consumption

impact ionization FET
tunneling FET
high energy carrier injection
current drivability
MEMS/NEMS
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Spotlight
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Concept of a mechanical switch
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Motivation
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What about the channel?
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On/off states
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Applications

• Logic applications

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Example
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Hybrid NEMSCMOS integrated circuits

• a novel strategy for energy-efficient designs

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Comparison

• Leakage current, Low ION

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Sensors

• Mass sensors from MEMS to NEMS

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RF MEMS/NEMS Resonator forwireless commucation
systems
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Mems resonators

1. capacitive , b) piezoelectric bulk acoustic
   waves,
2. c)PE surface acoustic waves

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Integrated Passive Devices(IPD) technology

• provides simultaneous fabrication of RF MEMS
  passives such as switches, tunable capacitors,
  fixed MIM capacitors, high-Q inductors, and other
  RF/microwave passives. It can be also extended
  for heterogeneous integration of
• RF MEMS devices, CMOS circuits, sensors, and etc.

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Resonant Gate Transistors

• Pure capactive and CMOS-MEMS