TOWARDS PIONEER NANOELECTRONIC PROJECT:

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TOWARDS PIONEER NANOELECTRONIC PROJECT
INTEGRATED CIRCUITS WITH MICRON-SIZED NANOIONIC
SUPERCAPACITORS
Alexander DESPOTULI, Alexandra ANDREEVA,

Vitali ARISTOV, Peter MALTSEV
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Content

• Description of the Institute of Microelectronics
  Technology and High-Purity Materials Russian
  Academy of Sciences (IMT RAS, Chernogolovka, RF).
• Research activities of the IMT RAS.
• Research activities where co-operation is sought
  nanoionic supercapacitors for
  sub-voltage and
  deep-sub-voltage nanoelectronics and related
  technologies.

Chernogolovka, IMT RAS
Alexander Despotuli
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1. Description of IMT RAS

• The IMT RAS is one of the base institutes in
  the field of micro(nano)electronics in Russia. It
  has a staff of 400 including 150 researches. IMT
  RAS was founded in 1984. When organized IMT RAS
  was set the tasks to perform the basic researches
  in the field of physical bases of
  microelectronics and the properties of micro- and
  nanoobjects, as well as the creation of the
  methods for the control and diagnostics of
  nanoobjects, the elaboration of new technological
  processes and a search and production of new
  materials for microelectronics. IMT RAS is the
  initiator of the development of such original
  scientific leads, which won world recognition
  metal nanoelectronics, Bragg-Fresnel x-ray optics
  and nanoionics. Recently, IMT RAS active
  participates with A.Geim (University of
  Manchester) - former scientist of IMT RAS - in
  the discovery of graphene and graphene FIT.
• 2. Research activities of the IMT RAS

Physical principles of the creation of element
base for nanoelectronics and quantum computers.
Elaboration of the foundations for materials
technology and technology of element base for
microsystem engineering including
nanoelectronics, nano-ionics, and nano-optics as
well as the development of technologies for the
production and analysis of the materials for
electronic engineering. Physical foundations and
technology for the formation of device structures
of micro- and nanoelectronics with atomic, ion
and molecular beams. Analytical and certification
center of IMT RAS.
Alexander Despotuli
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Cramming more components onto integrated
circuits
Gordon Moore
In nanoelectronics the need for
high-capacity capacitors of micron-size grows
sharply as technological norms and power supply
voltage are decreasing. The traditional
types of sub-voltage capacitors do not provide
the necessary density of capacity (50
?F/cm2), radiation and temperature durability.
Therefore, the alternative concept of wide
application of nanoionic supercapacitors (NSC)
based on advanced superionic conductors in
forthcoming 0.5-voltage and
deep-sub-voltage nanoelectronics and related
technologies is perspective.
Cramming more capacitance onto integrated
circuits!

Alexander Despotuli
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Alexander Despotuli
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Project specification
Al solid state film supercapacitors with record
high capacity-frequency characteristics
1) Maximum specific capacity among all
types of capacitors (10-100 preponderance)
2) Maximum upper frequency among all
types supercapacitors 3) Maximum
reliability at the elevated temperature
functioning (150 oC) 4) Huge
technological reserve for enhancement of C-f
characteristic
0.05 ?F
1 mm
At 155 oC the experimental devices with volume
0.0036 mm3 provides ?C gt10 ?F/mm3 . It is in gt10
times more then in multilayer ferroelectric
capacitors in the case of 01005 component (volume
0.016 mm3). Ferroelectric capacitors can not
long-acting work at elevated temperatures ( 150
??).
Alexander Despotuli
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Thank you
For establishing the nanoionic supercapacitor
project with high practical significance the
cooperation of Russian (IMT RAS, Technological
Center MIET, Micron) and Europe (EC,
Infineon, IMEC, STMicroelectronics)
organizations and company needs.

• Contact details
• http//www.ipmt-hpm.ac.ru/index.en.html
• http//en.wikipedia.org/wiki/Nanoionics
• Alexander Despotuli, Ph.D
• E-mail despot_at_ipmt-hpm.ac.ru