Title: Space Vacuum Epitaxy Center
1Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
Compact III-V Nitrides-Based Integrated
Multifunctional Optoelectronic Sensors for
Contaminant Characterization in Enclosed Space
Environments. A. Bensaoula, D. Starikov, I .
Berishev, N. Badi, N. Medelci, J.-W. Um, and A.
Tempez
- Outline
- Introduction
- Current Project objectives
- Results of the first 5 month work
- Objectives and goals for project continuation
- Preliminary results on Nitride materials growth
on Si - Conclusions
- Acknowledgements
2Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
- Optical sensors are based on
- Absorption/Reflection (ppm)
- Scattering Turbidimetry (ppm), Nephelometry
(ppb) - Fluorescence/Phosphorescence/Luminescence (ppt)
- Advantages of fluorescence
- High sensitivity
- Simplicity
- High specificity
- Low cost
- Multifunctionality (detection, concentration,
temperature, flow)
Laboratory type fluorescence system
3Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
4Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
WetStar Fluorometer
ECO-VSF Scattering Sensor
ECO Fluorometer
5Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
- Advantages and potential sensor applications of
III-V Nitrides - UV applications (wide bandgap)
- Higher efficiency (direct band)
- Possibility to tune the band gap from 1.9 to
6.2 eV (InGaN, AlGaN compounds) - High thermal stability (up to 600 C)
- High mechanical and chemical stability
6Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
- Current project objectives
- Development of compact integrated optoelectronic
sensors based on III-V Nitrides grown by RF MBE
for contaminants characterization - Implementation of Ionwerks Time of Flight Mass
Spectrometer for characterization of gaseous
environments - Integration of the optoelectronic sensor with
the Time of Flight Mass Spectrometer for
contaminants characterization of enclosed space
environments
7Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
Development and fabrication of LEDs and
photodiodes integrated on a single substrate
UV power 466 ?W Band 200- 400 nm
Diameter 0.6 mm Reverse bias 22 V
8Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
Experiments with Time of Flight Mass Spectrometer
PA-RIE curve (red) is shifted for illustrative
purposes
- High resolution m/Dm 800
- 4 orders of magnitude of
- dynamic range,
- Low background
- Detection limit lt1 ppm for
- 400msec scan
TOF-MS Cl2/Ar plasma spectra
TOF-MS BCl3/Ar plasma spectra
9Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
- Advantages of III-V Nitrides growth on commercial
silicon wafers - Much lower fabrication costs
- Compatibility with standard Si processing
equipment - Employment of Si-based junctions in the
optoelectronic structure that can extend the
spectral range into the visible and IR regions - Possibility of integration with other
silicon-based semiconductor devices or Micro
Opto- Electro-Mechanical Systems (MOEMS)
10Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
- New objectives for the TSGC project continuation
- Improve the epitaxial growth of III-V Nitrides
on commercial silicon wafers - Optimize the fabrication process of the
optoelectronic structure grown on Si (growth,RIE,
contact deposition) - Evaluate characteristics of the fabricated
fluorescence sensors (application range,
sensitivity, dynamic range) - Investigate possibilities of integration of the
fluorescence sensors with other MOEMS developed
on silicon
11Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
Preliminary results on Nitride materials growth
on Si
I-V characteristic of a GaN/InGaN p-n
junction diode heterostructure grown on Si wafer
Spectral sensitivity of a GaN/InGaN diode
heterostructure grown on Si
12Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
- Collaborators
- Ionwerks
- Ionwerks has over thirteen years experience in
manufacturing and marketing a complete surface
analysis systems including pulsed beam lines,
vacuum hardware, and custom electronics. Recent
additions to the product line have evolved from
the research interests in TOF ion scattering and
mass spectroscopy of recoiled ions (MSRI) which
have been developed over the last several years.
The new time of flight data and ion detector
system was developed around a 4 channel
Time-to-Digital Converter (TDC). In the fall of
1996 the compony began marketing a novel
reflectron ToF analyzer which is capable of
performing surface analysis using both secondary
ion mass spectroscopy (SIMS) and mass
spectroscopy of recoiled ions (MSRI). All
elements, including H, can be identified, with
isotopic resolution using SIMS and MSRI. This
instrument was recently named a 1997 RD 100
award winner and is now operating at Argonne
National Labs, University of North Carolina
Chapel Hill, and University of Houston.
13Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
- Conclusions
- Spectrally matched light emitting and
photosensitive Schottky diode structures have
been fabricated on a sapphire substrate - Ionwerks TOF mass spectrometer exhibited high
resolution, wide dynamic range, low background,
and high sensitivity for measurements performed
on BCl2/Cl2/Ar plasmas. - Blue emission and photosensitivity have been
observed on diode structures fabricated from
Nitride material layers grown on a single
commercial silicon wafer
14Space Vacuum Epitaxy Center University of
Houston NASA Commercial Space Center
Nitride Materials and Devices Project Prof.
Bensaoula bens_at_jetson.uh.edu Dr. Starikov
dstarikov_at_space.svec.uh.edu
- Acknowledgements
- Texas Space Grant Consortium Program
- NASA cooperative agreement, NCC8-127
-
- Ionwerks NASA Phase II SBIR contact monitored
by Mr. J. Watkins - Environmental Institute of Houston, University
of Houston - Institute of Space Systems and Operations
- Texas Advanced Technology Program