Silicon Accelerators

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Silicon Accelerators
An Introduction
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What is It?How Does it Work?What are the
Applications?The Team? Next Steps?
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Scientific Accelerators

Stanford Linear Accelerator
Large Hadron Collider


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Silicon Accelerator
Stacked 3D IC
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Silicon Accelerator A Fundamental Invention
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Patent Issued
1. A particle controller, comprising an input
port configured to receive a particle stream a
semiconductor cell comprising a cavity through
which at least a portion of the particles
comprising the particle stream is directed and
one or more electrodes coupled to the cavity and
configured to facilitate creation of an
electromagnetic field for directing the at least
portion of particles through the cavity wherein
the cell is part of a set of semiconductor cells
whose cavities are aligned to form a tube through
which the at least portion of particles is
directed
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How it works

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2D Single Chip Particle AcceleratorCornell
University

• DARPA funded project 2011
• Designed by MEMS Dept.
• Single beam per chip
• Energy of 30 Kev
• Proves that an IC can accelerate a particle beam
  at high energies.
• Proves beam deflection50 degrees
• Demonstration of high acceleration value

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Silicon Accelerator3D particle path
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Silicon Accelerator how it works
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3D SIC
Through Silicon Via
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Silicon AcceleratorElectrodes
Front side of Chip
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Silicon AcceleratorElectrostatic Lens
Electric Fields
Simon simulation
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Single Stage

Anode
Cathode
High Speed IC
High voltage IC
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Silicon Accelerator3D SIC

Side View of Stacked Single Stage
Beams
Digital Processor
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Multiple Stages
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Silicon Accelerator Summary

• Solid State Linear Particle Accelerator
• Enabled by 3D SIC and TSV (through silicon via)
• 3D SIC per accelerating stage
• Each 3D SIC contains
• Accelerating electrodes
• Drift tubes
• Electrostatic lens
• Digital and Timing controls
• Sensors
• Scanning electrodes

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Silicon AcceleratorNanobeam Ion Implantation
A new method for Integrated Circuit
manufacturing IC's making IC's
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Semi Manufacturing In Crisis
Fab capital cost at 14 nanometers gt10
Billion Next Generation Steppers (EUV)
gt100M Mask sets approaching 10M FinFet
transistors at 25 nm going to 10 nm Wafer size
increasing to 450mm Consolidation of 4 Major
Fab Manufacturing at 14 nanometers IC product
volume threshold gtmillions of units
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Nanobeam ImplanterA Million Beams

• Current Ion Implant

NBI
Silicon Accelerator
Single Beam cm
Bream Array Nanometer beams
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Silicon AcceleratorsBandwidth
Massive Beam Array 1 cm chip at 10 micron pitch
----1 Million beams Electrostatic micron-sized
lens ----Gigahertz scanning Bandwidth is million
beams times Gigahertz per beam Embedded Digital
processing EDA database Fully automated and
robotic wafer handling
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Nanobeam ImplanterIC Doping Comparison
Current implant Method
NBI
Photo-lithography
Digital-lithography
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NBI Digital Lithography
NBI
Photo-lithography
Silicon Accelerator
UV laser
Mask
ions
photons
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KLA-DARPA
The lenslet consists of a densely packed array of
4µm deep cylindrical holes with a 1.4 µm diameter
and top spacing of only 200nm. The electron beam
entering the lenslet holes is focused through a
set of 4 ring electrodes. The ring electrodes can
be tuned to focus the electron beams by applying
static voltages up to 50V on the ring electrodes.
The bottom of each hole consists of a small metal
plate that can be switched by a CMOS circuitry
below, either reflecting or absorbing the
incoming electrons. In this way, the incoming
electron beam is split into 1 million smaller
beamlets, a strategy designed to enable higher
throughput for the e-beam writing process through
parallelization.
Maskless electron beam lithography has the
potential to extend semiconductor manufacturing
to the sub-10 nm technology node. KLA-Tencor is
currently developing Reflective Electron Beam
Lithography (REBL) for high-volume 10 nm logic
(16 nm HP). .
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NBIMarket Opportunity

• Worldwide Semiconductors market is gt300 Billion
• Served by Equipment Market gt50 Billion
• Fab equipment new and upgrades
• Back-end Test and Assembly
• Fab Segments impacted by NBI
• Mask making
• Photo-lithography steppers
• Resist Track systems
• Ion Implant

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NBI Economic Potential

• No Tooling cost eliminates mask cost tooling
• Small production lots
• Low prototyping cost
• Customized even a few chip per wafer
• Lower Fab Capital Cost
• Smaller Fabs economical millions versus
  billions
• Better clean room utilization smaller footprint
• Lower Fab Inventory less inventory risk
• Fewer Processing Steps higher yields

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Performance Impact

• Multiple processes simplified
• DRAMLogicFlashAnalog
• Mixed Technologies Practical
• MEM's,LED,Laser,DLP
• Improved Analog
• Wide materials selection for
• Resistors, super-capacitors
• Transistor Structures
• different depth and doping across wafer
• Advanced Technologies
• Graphene transistors, magnetoresistive RAM

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NBI Summary

• New Methodology of Semiconductor Manufacturing
• Nanobeam Ion Implantation (NBI)
• Million beam Silicon Accelerators
• High bandwidth Digital Lithography
• Replaces Photo-lithography
• Lower cost
• Higher yields
• High IC performance

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Nanofusion
A safe portable clean power source
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Power of the Sun
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Fusion

• Light elementshydrogencombine into helium
• No radioactive by productsno meltdown possible
• First discovered in 1930 using linear accelerator
• Fission splits heavy elements---Uranium
• ---radioactive isotopes are by products
• Research to develop Fusion Engine began in 1950
• Fusion requires a hot dense compressed plasma

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Fusion

• Light elementshydrogencombine into helium
• No radioactive by productsno meltdown possible
• First discovered in 1930 using linear accelerator
• Fission splits heavy elements---Uranium
• ---radioactive isotopes are by products
• Research to develop Fusion Engine began in 1950
• Fusion requires a hot dense compressed plasma

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Fusion

• Why fusion been so hard to achieve?
• Plasmas expands
• No physical container possible extremely hot
• Reaction time plasma density
• Hot Plasma loses energy
• The electrons radiate light when hot
• Fusion energy must exceed loses
• How to compress plasma at gt100 million degrees?

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National Ignition FacilityFusion Experiment
The target chamber is hoisted by a crane and
prepared for installation in the NIF target bay.
c
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National Ignition Facility

• World's most powerful Laser system 192 Laser
  beams
• 2 million joules at 500 Terra-watts
• Inertial Confinement Fusion
• Millimeter diameter hydrogen fuel pellet
• Idea is to heat and compress fuel with laser
  beams
• Fuel failed to ignite due to
• Poor beam uniformity, jitter, coupling
  inefficiencies
• NIF funding for fusion ignition dropped

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Nanofusion
Ion manifold
Silicon Accelerators
Nanobeams
Target Region
l
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NanoFusionPlasma compression

Plasma compression
Ignited Core
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Conditions for FusionLawson Criterion
Nanofusion Beta gt10
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NanofusionBoron
Boron Nucleus
Helium Ions
Coulomb Barrier
Strong Force
Fusion
proton
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Nanofusion

• Millions of beams focused into nanometer region
• Uniform compression of hot plasma
• Sub-picoseconds timing reduces beam jitter to
  nanometer
• Ion energy of 100K electron volts 160 Million
  degrees
• Density of plasma is sum of beam densities
• Fuel is hydrogen and boron
• Converted to fast moving ions of helium
• Energy of helium ions re-converted into
  electricity
• Nanofusion is a portable power source
• About the size of basketball

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A few Other Apps
Nano Technology
Cancer Therapy
Holography
Instrumentation
Data Archive
Quantum Computing
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Member Role History
Alok Mohan Executive Leadership NCR-VP SCO-CEO
Sam Brown Technology strategy NCRMicroelectronics Alpine Semi-CEO
Tom Brummet Business Development NCR---Microelectronics Silego Semi -VP
Marcelo Martinex IC Design Principal Advanced Analog Design
Jonathan Wurtele Technical Adviser Berkeley Professor of Physics Senior Scientist LNL
Ed Pheil Technical Adviser General Dynamics Nuclear Engineer
John Bryant Technical Adviser Atmel VP Marketing
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Next Steps
Printed Circuit Board Identify Semiconductor
Partner Expand Team Release Analog IC Release
Digital IC Nanobeam prototype Release Development
Kit
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Confidence Factors

• 1. Manufacturing Very High-Processes are In
  Production
• 2. Competition No Direct Competitor at this
  Time
• Strong-Broad Patents-Trade Secrets
• 3. Engineering Digital ICBlock Diagram
  complete. Analog IC critical circuits simulated.
  Need to Identify Partner
• 4. Theory of Operation Proven in 2D chip
• 5. Market Entry Acceptance of Development
  Tool-Intel's Microprocessor Model
• 6. First Revenues Partnership RD Licenses
• Development Systems 18 Months

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Pending patents
Traveling Wave accelerator Fast electrons Medical
Active plasma cooling nano beam diameter NBI
High voltage high bandwidth amplifier High energy ions Fusion
Laser diode 3D SIC integration sensor instrumentation
Array of Paul traps Particle entanglement Quantum effect
Digital nanobeam ion implantation Massive array NBI
sub-micron hot dense plasma Target region focus Fusion
Micro-cellular electric-magnetic field EM field matrix Quantum effect
electron beam neutralization Lower beam spread NBI
Non-contact signaling Parallel processing Digital processor
Atomic layer deposition Advanced materials Nano technolgy
Structured plasma scientific instrumentation
High power chip amplifier Megawatt burst communications
Large array x-Ray emitter Soft x-rays holograms