III-V Compound Semiconductor Solar Cell Investigations Jud

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III-V Compound Semiconductor Solar Cell
InvestigationsJudy Rorison
Judy.rorison_at_bristol.ac.uk
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Why III-V Compound Semiconductors

• 2 approach-large area, cheap materials
  , -small
  device, high design
• 50 PV cost is housing so size, material
  stability, and material quantities are issues
• Therefore solar cell concentrators are winners

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People and Facilities in EE Dept

• Judy Rorison- laser and LED modelling and
  experimental group
• Martin Cryan- Electromagnetic modelling group
• Approach
• Design and test multi-junction solar cells
• Design and test intermediate band solar cells
• Surface profiling to enhance light absorption
• Facilities
• Solar cell simulator/ focussed ion beam etching,
  computer codes

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General
Material Band gap(eV) _at_302K Wave Length (nm)
GaP 2.26 549
GaAs 1.43 868
GaN 3.4 365
REF2
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Multi-junction solar cells
Single junction 30 efficiency Two junction 42
efficiency
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Intermediate Band Solar Cell
Hypothetical 63 efficiency
REF1
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Conclusions

• Design and testing for both types of solar cells
  (with materials from Sheffield and UCL)
• Etching of surface roughness to enhance light
  into SCs