Indudtrial Electronics

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UNIT-1

• EL 502 Industrial Electronics/ Power Devices

MUHSIN C.A. Govt. Poly Technic, Chelari
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Metal Oxide Semiconductor  Field Effect Transistor
M
O
S
F
T
E
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MOSFET Circuit
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MOSFET Symbol Circuit
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Structure of MOSFET
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Schematic structure of MOSFET
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Working principle of MOSFET

• modulation of charge concentration by a MOS
  capacitance
• between a body electrode and a gate electrode
  located above the body and insulated an oxide,
  such as silicon dioxide.

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Working principle of MOSFET

• If dielectrics other than an oxide gtgt a
  metalinsulatorsemiconductor FET (MISFET).
• Compared to the MOS capacitor, the MOSFET
  includes two additional terminals
  (source and drain), each connected to individual
  highly doped regions that are separated by the
  body region. 

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N and P channel of MOSFET
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N and P channel of MOSFET

• If the MOSFET is an n-channel or nMOS FET, then
  the source and drain are 'n' regions and the
  body is a 'p' region.
• If the MOSFET is a p-channel or pMOS FET, then
  the source and drain are 'p' regions and the
  body is a 'n' region. 

11
Cross section of NMOS with channel- OFF state
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Cross section of NMOS without channel- OFF state
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Working principle of MOSFET

• When a negative gate-source voltage (positive
  source-gate) is applied, it creates
  a p-channel at the surface of the n region,
  analogous to the n-channel case, but with
  opposite polarities of charges and voltages.
• When a voltage less negative than the threshold
  value (a negative voltage for p-channel) is
  applied between gate and source, the channel
  disappears and only a very small sub threshold
  current can flow between the source and the drain.

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Working principle of MOSFET
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Working principle of MOSFET

• The device may comprise a Silicon On Insulator
  (SOI) device in which a Buried Oxide (BOX) is
  formed below a thin semiconductor layer.
• If the channel region between the gate dielectric
  and a Buried Oxide (BOX) region is very thin, the
  very thin channel region is referred to as an
  Ultra Thin Channel (UTC) region with the source
  and drain regions formed on either side thereof
  in and/or above the thin semiconductor layer.

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Working principle of MOSFET

• Alternatively, the device may comprise a
  Semiconductor On Insulator (SEMOI) device in
  which semiconductors other than silicon are
  employed.
• When the source and drain regions are formed
  above the channel in whole or in part, they are
  referred to as Raised Source/Drain (RSD) regions

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Basic MOSFET (n-channel)

• The gate electrode is placed on top of a very
  thin insulating layer.
• There are a pair of small n-type regions just
  under the drain source electrodes.
• If apply a ve voltage to gate, will push away
  the holes inside the p-type substrate and
  attracts the moveable electrons in the n-type
  regions under the source drain electrodes.

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Basic MOSFET (n-channel)

• Increasing the ve gate voltage pushes the p-type
  holes further away and enlarges the thickness of
  the created channel.
• As a result increases the amount of current which
  can go from source to drain this is why this
  kind of transistor is called an enhancement mode
  device.

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• Cross-section and circuit symbol of an n-type
  MOSFET.

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• An n-channel MOS transistor. The gate-oxide
  thickness, TOX, is approximately 100 angstroms
  (0.01 mm). A typical transistor length, L 2 l.
  The bulk may be either the substrate or a well.
  The diodes represent pn-junctions that must be
  reverse-biased

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Basic MOSFET (p-channel)

• These behave in a similar way, but they pass
  current when a -ve gate voltage creates an
  effective p-type channel layer under the
  insulator.
• By swapping around p-type for n-type we can make
  pairs of transistors whose behaviour is similar
  except that all the signs of the voltages and
  currents are reversed.
• Pairs of devices like this care called
  complimentary pairs.

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(No Transcript)
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• In an n-channel MOSFET, the channel is made of
  n-type semiconductor, so the charges free to move
  along the channel are negatively charged
  (electrons).
• In a p-channel device the free charges which move
  from end-to-end are positively charged (holes).

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Illustrates the behaviour of a typical
complimentary pair of power MOSFETs made by
Hitachi for use in hi-fi amplifiers.

• Note that with a n-channel device we apply a ve
  gate voltage to allow source-drain current, with
  a p-channel device we apply a -ve gate voltage.

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Structure and principle of operation

• A top view of MOSFET, where the gate length, L,
  and gate width, W.
• Note that L does not equal the physical dimension
  of the gate, but rather the distance between the
  source and drain regions underneath the gate.
• The overlap between the gate and the source/drain
  region is required to ensure that the inversion
  layer forms a continuous conducting path between
  the source and drain region.
• Typically this overlap is made as small as
  possible in order to minimize its parasitic
  capacitance.

• Top view of an n-type MOSFET

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MOSFET-Basic Structure
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I-V Characteristics of MOSFET
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I-V Characteristics of MOSFET
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I-V Characteristics of MOSFET
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Ideal Output Characteristics of MOSFET
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Ideal Transfer Characteristics of MOSFET
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Types of MOSFET
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Types of MOSFET
Enhancement Mode
Enhancement Mode
Depletion Mode
Depletion Mode
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Subthreshold region
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Channel Length
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MOSFET Dimensions - Trend
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MOSFET scaling scenario
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Voltage Scaling
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Power Supply Voltage
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Threshold Voltage
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Threshold Voltage
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Gate Oxide Thickness
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Channel Profile Evolution
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MOSFET Capacitances
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MOSFET Capacitances
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Insulated Gate Bipolar Transistors (IGBT)
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Insulated Gate Bipolar Transistor (IGBT)
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Construction Operation of IGBT
The operation of the IGBT simply can be treated
as a partitioning of an N-channel MOSFET and
a PNP bipolar transistor. The IGBT functions as
a bipolar transistor that is supplied base
current by a MOSFET.
Structure Of IGBT
Equivalent Circuit
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Whats a IGBT ?
IGBT(Insulated Gate Bipolar Transistor) is a
voltage-controlled power transistor, similar to
the power MOSFET in operation and construction.
These devices offer superior performance to the
bipolar-transistors. They are core cost-
effective solution in high power, wide range of
frequency applications
COMPARISON TABLE
I G B T VOLTAGE LOW SIMPLE LOW MEDIUM MEDIUM
MOSFET VOLTAGE LOW SIMPLE HIGH FAST LOW
T R CURRENT HIGH COMPLEX LOW SLOW HIGH
ITEM CONTROL PARAMETER CONTROL
POWER CONTROL CIRCUIT ON-RESISTANCE SWITCHING
SPEED SWITCHING LOSS
SYMBOL
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Absolute Maximum Rating of IBGT
Symbol
Descriptions
BVCES BVGES ICmax ICpeak PCmax FBSOA SCSOA
Maximum voltage applicable between C-E (The
Gate-Emitter is short-circuited) Maximum voltage
applicable between G-E Maximum DC current can
flow into the collector. Indicated by radiation
condition (ex TC25C) Maximum Peak current can
flow into the collector. Indicated by current
pulse width(ex10µs) and Duty-cycle(exbelow 1),
and Radiation condition. Allowable collector loss
and maximum current consumption. In usual case,
at the temperature of TC (ex 25C), the
thermal resistance R?jc
--------------------- becomes and usually
indicated by its upper limit. Forward Bias Safe
Operating Area It is the maximum pulse
responding operation range to the voltageVce
between C-E and the graph of the collector
current. The characteristics of the high voltage
part is deteriorated due to the thermal loss and
the over concentration of current. It is
because of the phenomena called the second
breakdown mode. Short Circuit Safe Operating Area
For motor driving, if the load is short-circuited
due to human fault then the flow of the
abnormally high current would destroy the
device, so the current sensing and the feedback
to the control block become the necessity.
Which requires the IGBT should withstand the
short- circuit condition for about 35µs. ex
If the load is short-circuited when the applied
voltage between the C-E is about 300500V, then
the current upto 8-12 times higher than the
rated current will flow which would destroy
the device within 2030µs. Thus the protective
circuit is designed to be about 10µs with the
consideration of the feedback delay time.
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Thermal Resistance
Descriptions
Symbol
R?J-C(I) R?J-C(F) R?C-S
Thermal resistance between IGBT's junction to
case Thermal resistance between FRD's junction to
case Thermal resistance between the case of IGBT
to the heat sink
Electerical Characteristics
Symbol
Descriptions
BVCES VGE(th) ICES IGES
Collector-Emitter Breakdown Voltage (Gate-Emitter
is short-circuited) The breakdown voltage
between C-E when the gate and the emitter is
short-circuited and the rated current (ex
IC10mA) is applied to the collector. Normally
the minimum value (ex 600V) is defined. Gate
Threshold Voltage The voltage between
Gate-Emitter at the rated voltage between C-E and
for the rated current IC(ex 1mA). The minimum
and the maximum value is given. Collector Cutoff
Current The maximum collector current when the
gate and the emitter is short-circuited and the
rated voltage is applied to the collector. Gate -
Emitter Leakage Current The maximum gate current
when the collector and the emitter is
short-circuited and the rated voltage is applied
between the gate-emitter.
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Symbol
Descriptions
VCE(sat) Qg Cies Coes Cres Td Tr Ton Tf
Toff
Collector - Emitter Saturation Voltage The
saturation voltage between the collector and the
emitter when the rated current is applied to the
collector and the rate voltage is applied between
the gate and the emitter. Total Gate Charge The
amount of the gate electric charge needed for the
IGBT to be completely On. The amount of the
driving current needed can be decided. Input
Capacitance Output Capacitance Reverse
Capacitance Turn on Delay Time The time for the
output to reach the 10 of the maximum of the
output current waveform after the pulse is
applied to the gate. Turn on Rise Time The time
to reach from 10 to 90 of the output current
waveform. Turn on Time The time for the output to
reach the 90 of the maximum of the output
current waveform after the pulse is applied to
the gate. Turn off Falling Time The time to reach
from 10 to 90 of the output current
waveform. Turn off Time The time for the output
to reach the 10 of the maximum of the output
current waveform after the pulse is removed from
the gate.
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IGBT Operation Area
HIGH VOLTAGE HIGH CURRENT
25 KW 10 1 0.1
GTO
HIGH FREQUENCY
POWER
IGBT
BJT
MOSFET
1
70 1000KHZ
FREQUENCY
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Characteristics
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Industrial Applications of IGBT
IGBT Module Discrete
?Elevator
?Transportation -Ignition control, Battery
charger
?Power Supply - UPS, SMPS
?F.A. - Inverter, AC servo, Robotics
?Welding machine
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Consumer Applications of IGBT
IH-Jar (Rice Cooker)
IGBT Module Discrete
IH-Cooker
MWO
Camera Strobo
Washing machine
Inverter Air-conditioner
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Examples of Application Circuit (I)
? home appliance (IH-JAR, IH-Cooker, MWO..) ?
Package Type TO-220, TO-3P, TO-264 (SGP..,
SGH..., SGL...) ? Current rating 30 80A
2IGBT DISCRETE
1IGBT DISCRETE
SINGLE ENDED TYPE (VCE 900 1700V)
HALF BRIDGE TYPE (VCE 600V)
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Examples of Application Circuit (II)
? Industrial Equipment (Welding, UPS, IH
Heater) ? Package Type 2-PAK,1-PAK
Module(FM2G...,FM1G....) ? Current Rating 600V
50 600A, 1200V 50A 200A
41-PAK IGBT MODULE 22-PAK IGBT MODULE
FULL BRIDGE TYPE
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Examples of Application Circuit (III)
? 3Phase Motor Drive.(Inverter,Frequency
Converter) ? Package Type 6-Pak,2-Pak,1-Pak
Module(FM6G...,FM2G...,FM1G....) ? Current
Rating 600V 50 600A, 1200V 50A 200A
6Discrete CO-PAK 16-PAK IGBT MODULE 22-PAK
IGBT MODULE 61-PAK IGBT MODULE
M
3PHASE BRIDGE TYPE
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Examples of Application Circuit (?)
DC Servo (NC, ROBOT)
DC Chopper
DC.M
From Rectifier
From Rectifier
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Examples of Application Circuit (?)
Low Output CVCF Inverter
CVCF Inverter (UPS)
Filter
M
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Examples of Application Circuit (?)
VVVF Inverter (PAM)
M
VVVF Inverter (PWM)
M
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Block Diagram of Inverter System
. Using the Conventional IGBT Modules
Constant Voltage Constant Frequency
IGBT Modules
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Home Appliances Application
. Using the Conventional IPMs
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Welding Machine type-1
Full Bridge Topology 50 400A / 600V,1200V(IGBT
2-PAK Module) Large Capacity
Voltage
Current
Welding Output
3f
To Gate
Starter
PWM
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Welding Machine type-2
2 IGBT Forward Topology 20 50A /
600V,1200V(Discrete) Small and Medium Capacity
Voltage
Current
Welding Output
3f
To Gate
Starter
PWM
Normally IGBT using by parallel connection
Parallel numbers depend on output power Need
Vce(sat) matching tightly (with in 0.1V)
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Welding Machine type-3
Half Bridge Topology 50 400A /
600V,1200V(2-PAK) Large Capacity 20 50A /
600V,1200V(Discrete) Small and Medium Capacity
Voltage
Current
3f
Welding Output
To Gate
PWM
Starter
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Un-interruptible Power Supply
Application Personal Use 1050A /
600V,1200V(Depend on Battery Design)(Discrete)
For Group Source 50600A / 600V,1200V(2Module,1Mo
dule)
AC-DC Converter
Ac
Output
Battery Pack
Control Circuit
To IGBT
Output
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Power Factor Correction
Application 2040A/600V(Discrete) Home
Appliance, Air-conditioner For Telecommunication
Power and industrial power
Vout
Regulated DC Output
T
To Load
AC
Controller
V,I
P.F gt 0.99
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Camera Strobe
- SCRs previously used in cameras change to IGBTs
. - By using IGBTs in strobe of cameras, flash
control for exact focusing and red-eye
protection can be possible. - Strobe application
needs low Vce(sat), high peak current capability
of IGBT because of the relatively long
switching period of a couple of milli-seconds. -
Industry needs trench IGBT for low-voltage
operating battery system from 3V source.

A method of using SCRs
A method of using IGBT
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Induction Heating JAR Cooker
This single ended resonant inverter is developed
for the rice cooker because of simple
construction, high efficiency and low cost.
IGBTSolutions
Features - Low Saturation Voltage -
Simple Gate Drive - Wide SOA - IGBT With
FRD
- SGH40N60UFD - SGL80N60UFD -
SGL160N60UFD - SGL60N90DG3 - SGL40N150D
- FGL40N150D - FGL60N170D
Half Full Bridge Type
Single Ended Type
AC
Current Feedback
Gate Drive Circuit
IH -Controller
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Micro Wave Oven (ZVS type)
This single ended resonant inverter is developed
for food cooker because of simple construction,
high efficiency and low cost.
Features - Low Saturation Voltage -
Simple Gate Drive - Wide SOA - IGBT With
FRD
IGBTSolutions
- SGH40N60UFD - SGL80N60UFD -
SGL160N60UFD - SGL60N90DG3 - SGL40N150D
- FGL40N150D - FGL60N170D
Half Full Bridge Type
Single Ended Type
DISPLAY
AC
u-Com (4-Bit)
Input Key PAD
Control Circuit Gate Driver
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IGBT Gate Drive Solutions-1
- Home Appliance(IH jar/cooker) - Single ended
topology - General analog drive IC - Device
AN6711(Panasonic)
TA8316S(Toshiba) FAN8800(FSC)
- Small/Medium Power application - Bridge
topology(half/full) - Photo coupler with analog
drive IC - Device HP3120 TLP250
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IGBT Gate Drive Solutions-2
1
2
1
2
2
1
1
2
2
1
1
2
1
3
HVIC
1
HVIC
2
3
HIGH
2
SIDE
2
1
1
2
2
1
3
3
- Small power application - Bridge
topology(half/full) - High voltage analog
process with bootstrap circuit - Device
IR2112(IR) ?(Toshiba)
Harris
- Small Power application - Bridge topology
High side switch - High voltage analog process
with bootstrap circuit - Device IR2117(IR)
?(Toshiba) Harris
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IGBT Gate Drive Solutions-3
- Medium power application - Bridge
topology(half/full) - Photo coupler analog
driver with de-saturation network - Device
Photo coupler
MC33153(Motorola) FAN8800(FSC)
- Medium/High Power application - Bridge topology
(half/full) - Hybrid photo coupler discrete
driver One chip photo coupler with analog
driver - Device One chip, HP316J(HP)
Hybrid, EXB841(Fuji)
M57962(Mitsubishi)
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Power Loss Switching Loss Conduction
Loss
? Switching Loss Turn On Loss Turn Off Loss
Vce
Ic
Vce(sat)
Leakage Current
Off Time
On Time
Turn On Time
Turn Off Time
Off Time
Conduction Loss
Turn On Loss
Turn Off Loss
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Switching Test of IGBT
Inductive Load
Vge
G

Same D.U.T.
Load
Ic
-15V
G
Rg
Vce
D.U.T.
G
-
Half Bridge Test Circuit
Waveform
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Question What is a difference between CO-PAK
and DISCRETE in IGBT?
Answer - CO-PAK IGBT have a parallel
DIODE. freewheeling current can flow through a
parallel DIODE. - CO-PAK is commonly used
in Bridge Topology and DISCRETE is used in Single
Ended Topology.
CO-PAK IGBT gt IGBT DIODE in one
PACKAGE DISCRETE IGBT gt Only IGBT
Application Example
CO-PAK
Discrete IGBT
M
Transformer
-Forward SMPS -Fly-back SMPS
-DC Motor Control
- Induction Heating
- Lamp Ballast
- Induction Motor
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Question What is the Short Circuit Withstand
Time(Tsc) ?
Answer - IGBTs are need to be protected
from over current caused by Motor destruction or
fault by noise. Normally protection
circuit has delay time(37uS),so IGBTs have to
withstand certain time under Short
circuit condition - Motor drive product
(RUF-Series) is guaranteed at least 10uS for Tsc.
Delay time 37uS
SC --gt Detecting abnormal
condition --gt Feedback --gt Gate
Turn-off (Over
Vce(sat),DC line current)
(Soft Turn-off)
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Question What is a difference between RUF and
UF/XF SERIES ?
Answer - IGBT application is
mainly divided into two parts. . One
is the motor drive application(AC INDUCTION,
SERVO,BLDC,SR MOTOR). and the
other is power conversion application(SMPS,UPS,
CONVERTER). - product line-up and
characteristics are as follow.
Series RUF/RUFD UF/UFD XF/XFD NO Suffix
Application Motor SMPS(lt50khz),UPS SMPS(gt100
khz) IH Cooker, Strobo
Design key point Rugged,SC Rated High
performance High Speed depend on System
Characteristics Vce(sat)2.2V,tf120nS Vce(s
at)2.0V,tf80nS Vce(sat)2.5V,tf30nS depend on
Device
Example SGP5N60RUFD SGP23N60UFD
????? SGL40N150D SGR15040L
under developing
- The ordering system of IGBT Module is not
classified as applications but is follows US
series for convenience. But basic
characteristics of Module is identified with that
of Discrete IGBT RUF Series. (Rugged,SC Rated)
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Question In place of MOSFET, IGBT can be used
in power conversion
application?
Answer IGBT can take the place of
MOSFET in power conversion applications because
of the same gate drive method,
voltage driving. Take care of the
specific characteristic of your system before
applying IGBT. Especially, in bridge
topologies, do use the CO-PAK IGBT including
diode. 1) LIMITATION OF FREQUENCY
(in case taking place of MOSFET in several
systems) - RUF/RUFD UP TO 30KHZ
- UF/UFD UP TO 70KHZ (for hard
switching) - XF/XFD UP TO
100KHZ 2) GATE DRIVE
CIRCUIT - Lower gate-resistance is
possible in bridge topologies than that of MOSFET
because there is any limitation
of gate-resistance which can destroying devices
by dv/dt and di/dt.
- Lower gate-resistance offers lower turn-on
loss.

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Question Whats the IGBTs Current Rating?
Answer Most power devices (BJT,
MOSFET... etc.) usually offers the current Rating
at Tc 25 ?. In motor applications,
Fairchild IGBT offers the current value defined
at the condition of Tc 100 ? and
in the power conversion applications, offers the
value at Tc 25 ?. The current rating
of Tc 25 ? is about double comparing with that
of Tc 100 ?.
SGP40N60UF(40A at Tc25?) SGP20N60RUF(20A at
Tc100?)
Same current rating
83
Question Whats Turn off Energy (Eoff) ?
Answer Turn off Energy (Eoff) offers
useful tips to designers how much
switching-losses device generates and how
to design the thermal management.
Switching loss can be easily expected in systems
by multiplying Eoff specified in datasheets and
switching frequency of systems Eoff
can provide more valuable information to designer
than the turn-off falling time, tf.

Vce
Ic
Turn off Waveform
S/W Losson lossoff loss
(EonEoff) f
Turn off Power (PVI)
Turn off Energy (E P(t) )
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Question How come Voltage Ratings are 600V /
1200V ?
Answer The voltage rating of IGBT is
generally divided into two part, 220/240V 3-phase
AC and 400/440V. For instance, there are
200V rating IGBTs for low voltage UPS, 1700V
rating for 580 AC power source, and
2200/3300V rating for several kind of railway
systems. Industry needs 400/900/1500V
rating IGBTs more and more.
1. IGBT VOLTAGE RATING ( Bridge Topology
) 2. IH APP IGBT VOLTAGE RATING ( Zero
Voltage Switching )
AC 220 --gt DC (2201.4311V) --gtAC variation
Design Margin ( 3111.8 560V ) AC 380 --gt DC
(4001.4560V) --gt
( 5601.8 1008V )
AC 220 --gt DC(2201.4311V) --gtreverse
voltage(3113.14980V) --gt (9801.51470V ) AC
110 --gt DC(1101.4155V) --gt
(1553.14 490V) --gt (4901.5750V )
85
FAIRCHILD IGBTs Solution
We only recommend to use Fairchild IGBT to people
who have used IGBT made in some where
else. Thats the only how they can well the
superior quality of Fairchild IGBT.
Fairchild offers...
Performance Curve

• High Performance
• - Low Saturation Voltage
• - High Speed Switching
• - Low Turn-off Energy
• High Ruggedness
• - Latch-Free Characteristics
• - Short-Circuit Immunity
• High Current
• - Easy to Parallel Operation
• - Positive Temperature Coefficient

86
Ordering Information of IGBT
Discrete
87
Ordering Information of IGBT
Module
FM E 6 G 30 US 60
Voltage Rating(X 10)
Die characteristics US Ultra Fast SC Rated
Current Rating
G IGBT
Circuit Type 1 Single 2 Half Bridge 6
3Phase Bridge 7 Complex
Module Type Blank Standard Type E Econo
Type C Complex Type
FAIRCHILD Module
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IGBT Line-up
High Performance IGBT
High Performance IGBT
Ic A _at_ Tc100?
Vces V
Symbol
1.2
3
7
13
20
40
80
600
SGR2N60UF
SGR6N60UF
SGP13N60UF
SGP23N60UF
SGP40N60UF
SGH80N60UF
SGP6N60UF
SGS13N60UF
SGS23N60UF
SGS40N60UF
600
SGR2N60UFD
SGP6N60UFD
SGP13N60UFD
SGP23N60UFD
SGH40N60UFD
SGH80N60UFD
SGL160N60UFD
SGS6N60UFD
SGS13N60UFD
SGS23N60UFD
SGF40N60UFD
SGW6N60UFD
SGW13N60UFD
SGW23N60UFD
89
Rugged IGBT
Ic A _at_ Tc100?
Symbol
Vces V
5
10
15
20
25
30
50
600V
SGP5N60RUF
SGP10N60RUF
SGP15N60RUF
SGP20N60RUF
SGH30N60RUF
SGW5N60RUF
SGW10N60RUF
1200V
SGH5N120RUF
SGH10N120RUF
SGH15N120RUF
SGH20N120RUF
SGH25N120RUF
600V
SGP5N60RUFD
SGP10N60RUFD
SGH15N60RUFD
SGH20N60RUFD
SGH30N60RUFD
SGL50N60RUFD
SGS5N60RUFD
SGS10N60RUFD
SGW5N60RUFD
SGW10N60RUFD
1200V
SGH5N120RUFD
SGH10N120RUFD
SGH15N120RUFD
SGH20N120RUFD
SGL25N120RUFD
D-PAK
I-PAK
D2-PAK
I2-PAK
TO-220
TO-220F
TO-3P
TO-3PF
TO-264
90
Compact / PIM Type IGBT Module
Ic A _at_ Tc100?
Vces V
PKG Type
5
10
15
20
25
30
50
600V
FME6G10US60
FME6G15US60
FME6G20US60
FME6G30US60
Compact
FMC6G10US60
FMC6G15US60
FMC6G20US60
FMC6G30US60
FMC6G50US60
PIM
FMC7G10US60
FMC7G15US60
FMC7G20US60
FMC7G30US60
FMC7G50US60
1200V
FME6G5US120
FME6G10US120
FME6G15US120
FME6G20US120
FME6G25US120
Compact
FMC7G5US120
FMC7G10US120
FMC7G15US120
FMC7G20US120
FMC7G25US120
PIM
Molding Type IGBT Module
Ic A _at_ Tc100?
Vces V
PKG Type
50
75
100
150
200
300
400
600V
FM2G50US60
FM2G75US60
FM2G100US60
FM2G150US60
FM2G200US60
FM2G300US60
FMBH1G50US60
FMBH1G75US60
FMBH1G100US60
FMBH1G150US60
FMBH1G200US60
FMBH1G300US60
FMBH1G400US60
FMBL1G50US60
FMBL1G75US60
FMBL1G100US60
FMBL1G200US60
FMBL1G200US60
FMBL1G300US60
FMBL1G400US60
1200V
FM2G50US120
FM2G75US120
FM2G100US120
FM2G150US120
FM2G200US120
91
Camera Strobe Application
IcA pk
Symbol
Vces V
PKG Type
130
150
SGR15N40L
SGR20N40L
400
(D-PAK)
(D-PAK)
D-PAK
SGU15N40L
SGU20N40L
(I-PAK)
(I-PAK)
I-PAK
FGS20N40L
(8-SOP)
8
-SOP
?

A
ll of the Logic level Gate Drive
Induction Heating Application
IcA
Vces V
Symbol
PKG Type
15
40
60
80
SGF15N90D
SGL60N90DG3
900
(TO-3PF)
(TO-264)
TO-3PF
SGL40N150D
1500
(TO-264)
FGL60N170D
FGL80N170D
1700
(TO-264)
(TO-264)
SGL40N150
1500V
(TO-264)
TO-264
92
IGBT Module Packages Equivalent Circuits
FME6G series
FME6G series
FMC6G series
FMC6G series
FMC7G series
FMC7G series
FM2G series
FMBL series
FMBH series