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Light Emitting Diodes

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Title: Light Emitting Diodes


1
Light Emitting Diodes
  • EE 698A
  • Kameshwar Yadavalli

2
Outline
  • Basics of Light Emitting Diodes (Electrical)
  • Basics of Light Emitting Diodes (Optical)
  • High internal efficiency designs
  • High extraction efficiency structures
  • Visible Spectrum LEDs
  • White-Light LEDs
  • The promise of solid state lighting

3
LED-Electrical Properties-PN junctions
  • PN junction diode in forward bias, the
    electron-hole recombination leads to photon
    emission
  • I Is(eeV/kT-1)
  • Threshold voltage Vth Eg/e
  • I IseeV/?kT
  • where ? is the ideality factor

Double Heterostructure is used to confine the
carriers, improving the radiative recombination
rate
  • From Light-Emitting Diodes, Fred Schubert.

4
LED-Electrical Properties-Hetero junctions
Grading of the heterojunction is done to reduce
the resistance seen by carriers
From Light-Emitting Diodes, Fred Schubert.
5
LED-Electrical Properties-Hetero junctions
From Light-Emitting Diodes, Fred Schubert.
6
LED-Electrical Properties-Carrier loss
  • The confinement barriers are typically several
    hundred meV (gtgtkT)
  • Due to Fermi-Dirac distribution of carriers in
    the active region, some carriers will have energy
    higher than that of the barriers
  • In AlGaAs/GaAs and AlGaN/GaN the barriers are
    high
  • In AlGaInP/GaInP the barriers are lower resulting
    in higher leakage currents

From Light-Emitting Diodes, Fred Schubert.
7
LED-Electrical Properties-Blocking layers
  • Electron Blocking Layers are required to prevent
    electron escape at high injection current
    densities

From Light-Emitting Diodes, Fred Schubert.
8
LED-Optical Properties-Efficiency
  • ?int of photons emitted from active region
    per second
  • of electrons injected in to LED per
    second
  • Pint / (h?)
  • I / e
  • ?extr of photons emitted into free space per
    second
  • of photons emitted from active
    region per second
  • P / (h?)
  • Pint / (h?)

From Light-Emitting Diodes, Fred Schubert.
9
LED-Optical Properties-Emission Spectrum
  • The linewidth of an LED emitting in the visible
    range is relatively narrow compared with the
    entire visible range (perceived as monochromatic
    by the eye)
  • Optical fibers are dispersive, limiting the bit
    rate X distance product achievable with LEDs
  • Modulation speeds achieved with LEDs are
    1Gbit/s, as the spontaneous lifetime of carriers
    in LEDs is 1-100 ns

From Light-Emitting Diodes, Fred Schubert.
10
LED-Optical Properties-Light Escape Cone
  • Total internal reflection at the semiconductor
    air interface reduces the external quantum
    efficiency.
  • The angle of total internal reflection defines
    the light escape cone.
  • sin?c nair/ns
  • Area of the escape cone 2pr2(1-cos?c)
  • Pescape / Psource (1-cos?c)/2 ?c2/4
    (nair2/ns2)/4

From Light-Emitting Diodes, Fred Schubert.
11
LED-Optical Properties-Emission Spectrum
  • Light intensity in air (Lambertian emission
    pattern) is given by
  • Iair (Psource/4pr2) X (nair2/ns2) cosF
  • Index contrast between the light emitting
    material and the surrounding region leads to
    non-isotropic emission pattern

From Light-Emitting Diodes, Fred Schubert.
12
LED-Optical Properties-Epoxy encapsulants
  • Light extraction efficiency can be increased by
    using dome shaped encapsulants with a large
    refractive index.
  • Efficiency of a typical LED increases by a factor
    of 2-3 upon encapsulation with an epoxy of n
    1.5.
  • The dome shape of the epoxy implies that light is
    incident at an angle of 90o at the epoxy-air
    interface. Hence no total internal reflection.

From Light-Emitting Diodes, Fred Schubert.
13
Temperature dependence of emission intensity
  • Emission intensity decreases with increasing
    temperature.
  • Causes include non-radiative recombination via
    deep levels, surface recombination, and carrier
    loss over heterostucture barriers.

From Light-Emitting Diodes, Fred Schubert.
14
High internal efficiency LED designs
  • Radiative recombination probability needs to be
    increased and non-radiative recombination
    probability needs to be decreased.
  • High carrier concentration in the active region,
    achieved through double heterostructure (DH)
    design, improves radiative recombination.

  • RBnp
  • DH design is used in all high efficiency designs
    today.

From Light-Emitting Diodes, Fred Schubert.
15
High internal efficiency designs
  • Doping of the active regions and that of the
    cladding regions strongly affects internal
    efficiency.
  • Active region should not be heavily doped, as it
    causes carrier spill-over in to the confinement
    regions decreasing the radiative efficiency
  • Doping levels of 1016-low 1017 are used, or none
    at all.
  • P-type doping of the active region is normally
    done due to the larger electron diffusion length.
  • Carrier lifetime depends on the concentration of
    majority carriers.
  • In low excitation regime , the radiative carrier
    lifetime decreases with increasing free carrier
    concentration.
  • Hence efficiency increases with doping.
  • At high concentration, dopants induce defects
    acting as recombination centers.

From Light-Emitting Diodes, Fred Schubert.
16
P-N junction displacement
  • Displacement of the P-N junction causes
    significant change in the internal quantum
    efficiency in DH LED structures.
  • Dopants can redistribute due to diffusion,
    segregation or drift.

From Light-Emitting Diodes, Fred Schubert.
17
Doping of the confinement regions
  • Resistivity of the confinement regions should be
    low so that heating is minimal.
  • High p-type conc. in the cladding region keeps
    electrons in the active region and prevents them
    from diffusing in to the confinement region.
  • Electron leakage out of the active region is more
    severe than hole leakage.

From Light-Emitting Diodes, Fred Schubert.
18
Non radiative recombination
  • The concentration of defects which cause deep
    levels in the active region should be minimum.
  • Also surface recombination should be minimized,
    by keeping all surfaces several diffusion lengths
    away from the active region.
  • Mesa etched LEDs and lasers where the mesa etch
    exposes the active region to air, have low
    internal efficiency due to recombination at the
    surface.
  • Surface recombination also reduces lifetime of
    LEDs.

From Light-Emitting Diodes, Fred Schubert.
19
Lattice matching
  • Carriers recombine non-radiatively at misfit
    dislocations.
  • Density of misfit dislocation lines per unit
    length is proportional to lattice mismatch.
  • Hence the efficiency of LEDs is expected to drop
    as the mismatch increases.

From Light-Emitting Diodes, Fred Schubert.
20
High extraction efficiency structures
  • Shaping of the LED die is critical to improve
    their efficiency.
  • LEDs of various shapes hemispherical dome,
    inverted cone, truncated cones etc have been
    demonstrated to have better extraction efficiency
    over conventional designs.
  • However cost increases with complexity.

From Light-Emitting Diodes, Fred Schubert.
21
High extraction efficiency structures
  • The TIP LED employs advanced LED die shaping to
    minimize internal loss mechanisms.
  • The shape is chosen to minimize trapping of
    light.
  • TIP LED is a high power LED, and the luminous
    efficiency exceeds 100 lm/W.
  • TIP devices are sawn using beveled dicing blade
    to obtain chip sidewall angles of 35o to vertical.

Krames et. al, Appl. Phys. Lett., Vol. 75, No.
16, 18 October 1999
22
Visible spectrum LEDs
The plot charts the gains made in luminous
efficiency till date.
From Light-Emitting Diodes, Fred Schubert.
23
Visible spectrum LEDs
  • The emission spectrum of the blue, green and red
    LEDs indicate that the green LED has a wider
    spectrum.
  • Alloy broadening leads to spectral broadening
    that is greater than 1.8 kT linewidth.

From Light-Emitting Diodes, Fred Schubert.
24
White-light LEDs
  • White light can be generated in several different
    ways.
  • One way is to mix to complementary colors at a
    certain power ratio.
  • Another way is by the emission of three colors at
    certain wavelengths and power ratio.
  • Most white light emitters use an LED emitting at
    short wavelength and a wavelength converter.
  • The converter material absorbs some or all the
    light emitted by the LED and re-emits at a longer
    wavelength.
  • Two parameters that are important in the
    generation of white light are luminous efficiency
    and color rendering index.
  • It is shown that white light sources employing
    two monochromatic complementary colors result in
    highest possible luminous efficiency.

From Light-Emitting Diodes, Fred Schubert.
25
White-light LEDs
  • Wavelength converter materials include phosphors,
    semiconductors and dyes.
  • The parameters of interest are absorption
    wavelength, emission wavelength and quantum
    efficiency.
  • The overall energy efficiency is given by
  • ?
    ?ext(?1/ ?2)
  • Even if the external quantum efficiency is 1,
    there is always an energy loss associated with
    conversion.
  • Common wavelength converters are phosphors, which
    consist of an inorganic host material doped with
    an optically active element.
  • A common host is Y3Al5O12.
  • The optically active dopant is a rare earth
    element, oxide or another compound.
  • Common rare earth elements used are Ce, Nd, Er
    and Th.

From Light-Emitting Diodes, Fred Schubert.
26
White-light LEDs
  • Phosphors are stable materials and can have
    quantum efficiencies of close to 100.
  • Dyes also can have quantum efficiencies of close
    to 100.
  • Dyes can be encapsulated in epoxy or in optically
    transparent polymers.
  • However, organic dyes have finite lifetime. They
    become optically inactive after 104-106 optical
    transitions.

From Light-Emitting Diodes, Fred Schubert.
27
White LEDs based on phosphor converters
A blue GaInN/GaN LED and a phosphor
wavelength converter suspended in a epoxy resin
make a white Light LED. The thickness of the
phosphor containing epoxy and the concentration
of the phosphor determine the relative
strengths of the two emission bands
From Light-Emitting Diodes, Fred Schubert.
28
Promise of Solid State Lighting
  • The use of solid state lighting devices promises
    huge savings in energy consumption.
  • The electricity for lighting needs is 60GW, over
    24 hrs.
  • About 24 GWyear is consumed by incandescent lamps
    with a luminous intensity of 15lm/W.
  • 36 GWyear is consumed by FL/HID lamps with a
    luminous intensity of 75lm/W.
  • Assuming that by year 2020, they are replaced by
    LEDs with luminous intensity of 150 lm/W, energy
    savings are 40 GWyear.
  • That translates to 40 billion in savings.
  • At 4Mtons / GWyear of coal consumption, net
    savings lead to 25 less coal consumption,
    leading to lesser emissions of green house gases.
  • Global savings are projected to be about 140B.

Roland Haitz, Adv. in Solid State Physics
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