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More Moore opportunities for fundamental and
applied research
Marco Fanciulli Laboratorio Nazionale MDM - INFM
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Outline

• The MDM-INFM National Laboratory
• Overview of the activity
• Advanced Materials and Processes for
  ultra-scaled devices
• Novel Characterization Techniques
• Fundamental Science for and with emerging
  devices
• Public Research in an Industrial Environment
  some considerations
• Conclusions

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The MDM INFM National Laboratory
The MDM Laboratory was founded in 1996 as a
partnership between the National Institute for
the Physics of Matter (INFM) and
STMicroelectronics (Agrate B.)
Mission of the Laboratory is the Development of
Materials, Processes, Devices and Analytical
Methods of Interest for Microelectronics
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Research Lines

• Materials for ultra-scaled CMOS based devices
• High-k Dielectrics
• Low-k Dielectrics
• Interconnections (Silicides, Cu)
• Substrates (Si, SiGe, Ge, III-V)
• Materials and processes for novel NVMs
• Nanoclusters in Oxides
• Oxides Resistive NVM
• Phase Change NVM
• Novel and emerging devices
• Electron Spin Resonance and Quantum Computing
• Spintronics
• Neuroelectronics

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Fundamental Research Applied Research -
Technology
One shouldnt work on semiconductors, that is a
filthy mess who knows whether they really
exist. Wolfang Pauli, 1931
1947 Bardeen and Bratain invent the
transitor (motivated by the understanding of the
MS Interface)
1947 Hoerni, Moore, Noyce, Kilby realize planar
technology
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Materials for ultra-scaled CMOS based devices
SEM cross-section of a memory device
Dielectrics
Low - k Materials (intermetal)
BPSG (premetal)
Gate and Tunnel Oxides Interpoly Oxides Novel
high k Materials
Substrates
Silicides, Cu
Point Defects, Surface contamination, and Stress
Mapping (STI)
Interconnection Silicides (CoSi2), Cu Transition
Metal Silicides
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Technology scaling
S. Lai, Intel
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Microelectronics Road Map
2002
2005
2008
2011
2014
2030
1999
DRAM 1/2 Pitch nm
70
50
180
130
100
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MPU Gate Length nm
140
85
65
45
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Near Term
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Long Term
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Nanotransistor
10 nm
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NVM Flash Memory
Curtesy of Intel
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High-k Materials

• Scaling down tunneling

• EOT

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Key guideline for selection

• Permittivity
• Band gap and band alignment to silicon
• Thermodynamic stability
• Film morphology
• Interface quality
• Compatibility with the current or expected
  materials to be used in processing for CMOS
  devices,
• Process compatibility
• Reliability

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Relevant properties
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High-k dielectrics ALD Growth
Gate
High-k
Drain
Source
Si substrate
The ALD system at MDM
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Oxide Epitaxy on Si(INVEST IST Project)
HRTEM cross sections of (a) an Y2O3 layer grown
on a Si(001) substrate misoriented 4 ? -110
and (b) an Y2O3 layer grown on an exact Si(001)
substrate under identical conditions, viewed
along the lt110gtSi zone axis. A and B mark two
twin domains. Insets depict the corresponding
diffraction patterns Apostolopoulos et al. APL
2003. HRXRD also confirmed and quantified the
presence of the two domains
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Materials and processes for novel non-volatile
memory devices
Nanotechnology
structural and electrical characterisation of
nanoclusters in SiO2 (NEON)
Phase Change NVM
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Nanocrystals for NVM
Fluence 5 x 1015 cm-2
Average nanocrystals diameter (6.8?0.8 nm)
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Phase Change NVMChalcogenide (GeSbTe, ) and
Metal control gates
?Raman
XRD

• Structural properties
• Thermal properties
• Switching
• Interface properties
• Novel material
• Doping

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Spintronics FTJ
Magnetoresistance response at 30 K
HfO2/Co/SiO2 Grown by ALD
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Molecular electronics CNT, SNT
High-k for CNT Transistors
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Neuroelectronics
Collaboration with P. Fromherz, MPI-Martinsried
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Advanced characterization techniques
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Raman Microscopy of Strain in Silicon
Novel Technique for Tensorial Analysis
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Kelvin probe force microscopy
The electrostatic force signal detected at w is
proportional to the electric potential variations
at the surface
Application imaging of Sn nanocrystals embedded
in SiO2
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Advanced characterisation techniques and systems
for the Information Technology

• Electrically Detected Magnetic Resonance
  Techniques
• Characterization of low dimensional systems
• Interfaces
• 2DEG
• (Single) Spin detection and manipulation
  Quantum Computing (ESRQC)
• Internal Photoemission Spectroscopy (IPE)
• Inelastic electron tunneling spectroscopy (IETS)
• Noise in ultra-scaled MOSFETs
• Pulsed EPR
• Relaxation and decoherence times and ESEEM of
  shallow donors in Si and SiGe

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Group IV Based Quantum Computing (?)
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Quantum Computing industry interests?

• Identify possible schemes (fundamental/experiment
  al/technological)
• Understanding and controling decoherence and
  dephasing (fundamental research)
• Determine decoherence and decay times
  (fundamental/experimental)
• Single atom manipulation and positioning
  (technological)
• Realize single spin detection and manipulation
  (fundamental/experimental/technological)
• Scalability (technological)

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Research Activity in close collaboration with
Industrial Partners some consideration from the
front

• Short Term Objectives
• The industry need for process developement is
  the main driver
• Researchers are requested to react fast and to
  get into the problem quikly
• Motivate researchers to perform accordingly

• Medium Term Objectives
• Drivers Public and Industry
• Research with very well defined objectives
  (ITRS)
• Needs to identify solutions suited for the
  industrial applications
• Room for applied research possibly leading also
  to consequnces in other fields

• Long Term Objectives
• On and off the road-map
• Driver Public
• Risky activities
• Take into consideration integration and
  industrialization
• Possibility to open new fields of research and
  technology

• Fundamental Research
• Take advantage of state of the art technology
  (device quality, availability, reliability,
  reproducibility) to address more fundamental
  issues
• QHE
• HTc
• ...

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Conclusions I

• A strong interaction between fundamental
  research and technology is beneficial for both
  environments
• However, at least in Europe, significant changes
  in the academic as well as in the industrial
  attitudes are needed
• Fundamental research in condensed matter physics
  can and should take advantage of the advances in
  technology
• Critical step from research prototype to
  industrial product (how the prototype was
  conceived?)
• Balance road map conservative development
  priorities with highly risky approaches
• For Micro- and Nano-electronics as well as for
  spintronics the cost of appropriate research
  structures is very high needs for research
  centers close to main production/industrial RD
  facilities

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Conclusions II
Ingredients for the success of Silicon Valley

• World class university
• Entrepreneurial spirit
• Venture capital
• A supportive government
• Close relationships with the lead companies
• Infrastructure (legal, accounting, leasing)
• Real estate
• People Network

From Herman Hauser, director of Amadeus Capital
Partners Technology Spin-outs in Europe