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Modeling of Helium Implantation in SiC

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Qiyang Hu, Shahram Sharafat, Nasr M. Ghoniem. University of ... Spatial-temporal dependent. Coupled nucleation/growth. Bubble kinetics: SiC Key Properties ... – PowerPoint PPT presentation

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Title: Modeling of Helium Implantation in SiC


1
Modeling of Helium Implantation in SiC
Qiyang Hu, Shahram Sharafat, Nasr M. Ghoniem
University of California Los Angeles (UCLA)
Current Status of HEROs
New Phenomena in SiC
SiC Key Properties
  • Experimental He-Implantation of SiC Chen, et.al.
    2000
  • 26.3 MeV a-Beam
  • 51 Al-Degrader Foils
  • Uniform implantation to 200 mm
  • Findings
  • He radiation damage retained in SiC after
    annealing (1520 K) ? Dense population of bubbles
    and dislocation loops
  • No visible damage occurs under the same
    conditions after He-free irradiation.
  • After annealing 1520 K? Depleted zones along GB
    and inside grain 0.5 mm from GBs.
  • No defects in grains smaller than 0.5 mm
  • The DZs beneficial in SiC fibers with diameters
    below lt1 mm.
  • Above 200 appm He in SiC faceted bubbles form
    along GBs annealing (gt1520 K).
  • At RT 2450 appm He ? Platelets (9 nm diam. 0.6
    nm thick)
  • At lower appm platelets visible only after
    annealing (1520 K)
  • Above 1520 K with gt350 appm He, platelets break
    up into disks of bubbles
  • Concurrently interstitial-type dislocation loops
    are formed,
  • Bubbles and loops coarsen upon annealing by
    apparently strongly correlated coarsening
    processes.
  • He platelets form gas-filled nanocracks.

Crystal Types
Defect Properties
  • Basic rate-equation structure
  • 18 Species formulated
  • Vacancy, Interstitial, Di-Int., Single He,
    He-Vac, Di-He, Bubbles (Nuclei, Matrix, GB, PPT)
    Avg. He in a Bubble, Avg. Bubble Radius, He in
    GB, He in PPT bubble
  • Main HEROS-Code Features
  • Includes Radiation Damage
  • Spatial-temporal dependent
  • Coupled nucleation/growth
  • Bubble kinetics

Electric Conductivity
Mechanical Property
Thermal Conductivity
Reaction
Reference
Reference
By Vol Diffusion
Drift
By Surf Diffusion
Un-irradiated
By Vol Diffusion
Coalescence
By Surf Diffusion
Irradiated
Surface Loss
In first 0.1?m
Reference
Reference
CONCLUSIONS
Bubble-loop Complexes
Grain-boundary bubble
HAPL Condition on SiC
  • Helium implanted SiC retains damage after
    annealing. At high appm (gt200) he-palatelets
    form, which can break up into disk-bubbles or
    result in gas-filled nano-cracks
  • HEROs code can model spatial and temporal
    microstructure evolution including He-filled
    bubbles Thus HEROS can model helium bubble
    evolution as a function of time and location.
  • Recently observed platelet and disc-bubbles in
    He-implanted SiC requires development of new
    models.

SiC-Armor Temperature History
Ion Implantation Profile in SiC/shot
Nano-platelets
REFERENCES
Defect-free fiber
1 J. Chen, P. Jung and H. Trinkaus, PRL, v82,
p.2709 PRB, v61, p.12923 2 H. Huang, N.M.
Ghoniem, et al., Modell. Simul. Mater. Sci. Eng.
3, 615, 1995 3 T. Maruyama, M. Harayama, JNM
329333 (2004) 10221028 4 E. Oliviero, M.
Beaufort, and J. F. Barbot, JAP, v93, 2003,
p.231 5 A. Hasegawa et al. JNM 307311 (2002)
11521156
Depleted Zone
(R.Raffray, HAPL Nov, 2005)
(S. Sharafat, HAPL March, 2006)
High Average Power Laser Program Workshop, Oak
Ridge National Laboratory, March 21-22, 2006
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