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Quantum Dot Infrared Photodetector

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10/23/2006. 1. Quantum Dot Infrared Photodetector. Focal Plane Arrays ... 40-55mV change in bias for each decade increase in photocurrent. 10/23/2006. 8. MOSFET ... – PowerPoint PPT presentation

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Title: Quantum Dot Infrared Photodetector


1
  • Quantum Dot Infrared Photodetector
  • Focal Plane Arrays
  • The Direct Injection Readout Circuit
  • 10/23/2006
  • Eric Varley
  • evarley_at_ece.unm.edu

2
Detector Configuration
V_DETCOM
In Bump
Single Pixel Detector (Reverse Bias)
Array Pixel (Reverse Bias)
3
Direct Injection
?
S/H
To MUX
Reset
Reset
C_S/H
DB V_DETCOM 5.5 DE(6_0)
4
Direct Injection
  • V_DETCOM 5.5
  • Iph100pA
  • Idk18pA
  • Rdet2.2e9 O

Indigo Systems Application Note (1998), How to
Configure and Adjust the Detector Bias Circuit of
the ISC9705.
5
Direct Injection
  • Max Reverse Bias
  • V_DETCOM (8.5) 5.5 DE(6_0) (.5) 3.5V
  • Max Forward Bias
  • V_DETCOM (5.5) 5.5 DE(6_0) (-.1) .1

6
Spectral Data
7
Direct Injection
  • V_DETCOM 5.5
  • Iph20pA 1000pA
  • Idk18pA
  • Rdet2.2e9 O

40-55mV change in bias for each decade increase
in photocurrent
8
MOSFET
Neamen, Donald A. (2003). Semiconductor Physics
and Devices Basic Principles. New York The
McGraw-Hill Companies, Inc. Page 491.
9
MOSFET Band Diagram
Threshold Inversion
Weak Inversion
Neamen, Donald A. (2003). Semiconductor Physics
and Devices Basic Principles. New York The
McGraw-Hill Companies, Inc. Page 456,524.
10
Strong Inversion
Neamen, Donald A. (2003). Semiconductor Physics
and Devices Basic Principles. New York The
McGraw-Hill Companies, Inc. Page 524.
11
Weak Inversion
VT.9v VD.1v T68K, 77K, 300K
R. Swanson and J.D. Meindl, Ion Implanted
Complementary MOS Transistors in Low-Voltage
Circuits, IEEE Journal of Solid-State Circuits
SC-7(2), 146-153 (Apr 1972)
12
Weak Inversion
13
Weak Inversion
14
References
Questions?
  • Indigo Systems Application Note (1998), How to
    Configure and Adjust the Detector Bias Circuit if
    the ISC9705.
  • Neamen, Donald A. (2003). Semiconductor Physics
    and Devices Basic Principles. New York The
    McGraw-Hill Companies, Inc. Page 456, 491, 524.
  • R. Swanson and J.D. Meindl, Ion Implanted
    Complementary MOS Transistors in Low-Voltage
    Circuits, IEEE Journal of Solid-State Circuits
    SC-7(2), 146-153 (Apr 1972)
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