Silecs Product Presentation

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• Silecs Product Presentation
• June 2005

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Silecs Spin-on Polymers, Use and Benefits

• SLX28E Organosiloxane
• SLX28D Organosiloxane
• SLX24 ULK Low-K Organosiloxane
• SG200 Methylsiloxane
• P1DX Low T cureable Organosiloxane (in
  development)

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• Silecs SLX28E

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SLX28E Organosiloxane Polymer
SLX28E polymer designed for - High thermal
stability - High mechanical properties - K 3 -
High single coat thickness cracking threshold -
Sub-Al BEOL planarization and passivation
layers - Aggressive, high aspect ratio feature
fill - Low etch rate in aqueous HF - Film
stability (no water absorption) - UV curable
1. Measured using MIS structure and Hg-probe. 2.
Modulus hardness based on Nanoindentation of
gt600nm thickness films. 3. 24-hour water
immersion 4. Measured at 0.5MV/cm and 23 ºC 5.
Furnace cure 450 ºC for 3 hr
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SLX28E Properties vs. Cure Method
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SLX28E Film Properties vs. Furnace Cure T
All cure times in this study are 1 hr. A ramp up
to/from 200 ºC _at_ 10 ºC/min applied
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SLX28E Local Planarization vs. Furnace Cure T
All cure times in this study are 1 hr. A ramp up
to/from 200 ºC _at_ 10 ºC/min applied

• Local planarization established during the coat
  and bake process. Cure temperature has no impact
  on planarization.
• SLX28E begins cross-linking at 225 ºC. Once
  the film is cross-linked further thermal process
  have little effect on planarization.

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SLX28E Feature Fill HF Resistance
Topography formed by Al-line and cusped CVD SiO2
is used to simulate that found in advanced
pre-metal dielectric (PMD) applications.

• Complete fill of a highly recessed 500nm wide
  space through a 10nm wide opening.
• The SLX28E within the recessed feature and
  narrow slot is completely resistant to 251 DHF

• No etching of the SLX28E within the TEOS trench
  features occurs with the partially aqueous HF wet
  etchant. The TEOS lines features are etched.
• No cracking or other film defects observed

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• Silecs SLX28D

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SLX28D Organosiloxane Polymer
SLX28D polymer designed for - Reduced furnace
cure temperature and time - High sensitivity to
UV cure (photo-crosslinking) - K lt 3 - No silanol
or water byproducts - Film stability (no water
absorption) - Planarization feature fill -
Adhesion to dissimilar films - Low etch rate in
aqueous HF
1. Measured using MIS structure and Hg-probe. 2.
Modulus hardness based on Nanoindentation of
gt600nm thickness films. 3. 24-hour water
immersion 4. Measured at 0.5MV/cm and 23 ºC 5.
Furnace cure 450 ºC for 1 hr
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SLX28D Properties vs. Cure Method
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SLX28D Film Properties vs. Furnace Cure T
All cure times in this study are 1 hr. A ramp up
to/from 200 ºC _at_ 10 ºC/min applied
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SLX28D Film Properties vs. UV Cure Temperature
Films baked to 150 ºC prior to UV cure all UV
cure times are 5 min.
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SLX28D High Aspect Ratio Gap Fill
PECVD SiO2
Topography formed by Al-line and cusped CVD SiO2
is used to simulate that found in advanced
pre-metal dielectric (PMD) applications.

• Complete and defect free fill of a highly
  recessed 500nm wide space through a 10nm wide
  opening.
• The SLX28D within the recessed feature and
  narrow slot is completely resistant to 251 DHF.
  251 DHF test used for two reasons a) test wet
  etch resistance of SLX28D within narrow high
  aspect ratio features, b) to delineate SLX28D
  fill from PECVD SiO2 and Al layers.

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• Silecs SLX24 ULK

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SLX24 ULK Organosiloxane Low-K Polymer
SLX24 ULK polymer designed for - Low k
applications (k can be adjusted from 2.8 to 2.0
data within for k2.5 film) - Low RI
applications - Low porosity for targeted k
value - Small pore diameter - Short pore
interconnection length - High mechanical
properties at targeted k - Sensitivity to UV
curing - Stability (no water absorption)
1. Measured using MIS structure and Hg-probe. 2.
Modulus hardness based on Nanoindentation of
gt600nm thickness films. 3. Pore Volume ()
estimation based on RI, EP and PALS data for
k2.5 film 4. 24-hour water immersion 5. Measured
at 0.5MV/cm and 23 ºC 6. Cure 300 ºC, 1hr 525
ºC, 1hr
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SLX24 ULK Properties vs. Cure Method
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SLX24 ULK Film Properties vs. Pore Monomer
All samples furnace cured at 450 ºC for 1 hr
Normalized Conc. () ? Monomer component
included in final polymeric structure for pore
generation
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SLX24 ULK Pore Diameter Interconnect Length
Pore diameter
Normalized Conc. () ? Monomer component
included in final polymeric structure for pore
generation
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SLX24 ULK Film Properties vs. Cure Temperature
Std furnace cure ? 1 hour at given temp Alt
furnace cure ? 1 hour 300 ºC hold 1 hour at
given temp with
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• Silecs SG200

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SG200 Methylsiloxane Polymer
SG200 polymer designed for - Partial and total
etchback planarization processes - Sub-Al IMD
layer, BPSG leveling - Defect free fill of
features as narrow as 200nm in width - Low
cost - K 4 - Adhesion to underlying and capping
dielectric layers - Robust to material aging
(good shelf life resilience) - SG300 available
(320nm _at_ 3000 rpm)
1. Measured using MIS structure and Hg-probe. 2.
Measured at 0.5MV/cm and 23 ºC 3. Cure 425 ºC
for 1 hr 4. Double coated film (thickness 450nm)
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SG200 Planarization Double Coat
Planarization Double Coat (Cured Film Thickness
500 nm)

• Defect free fill of 900nm high line structures
• Cure temperature within range studied has
  minimal impact on feature planarization

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SG200 Planarization Single Coat
Planarization Single Coat (Cured Film Thickness
250 nm)

• The 900nm high 10.75 pitch metal line feature
  is 50 planarized by a 250nm thick film of SG200
• No film remains on top of the metal line feature

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SG200 Film Properties vs. Cure Temperature
All samples furnace cured in N2 for 1 hr with a
200 ºC ramp to/from target cure temperature
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SG200 Planarization vs. Material Aging
Samples aged to 9 days at 40 ºC and 41 days at
22 ºC

• No change in the planarization capability of the
  SG200 film noted as a result of both aging tests
• Minimal to no change in other masurable film
  properties (thickness, refractive index,
  dielectric constant) noted as a result of
  material aging

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• Silecs P1DX (Experimental Product)

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P1DX Low Temperature Cure Siloxane
P1DX Siloxane polymer design goals - Fully cured
at temperature of 200 ºC - Excellent adhesion
to a variety of substrates (SiO2, polyimides,
acrylates, ) - Ability to control coat polymer
properties to permit conformal to non-conformal
coating - Stable, passivation film, excellent
moisture barrier - For application of interest,
RI required to be between 1.4 and 1.6 in the
visible range P1DX is still under development
for applications in the CMOS Sensor technology,
other optics applications, MEMS, areas where low
temperature cure are required.
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P1DX Summary of Results to Date (polymer A)

• Optical properties
• Index of refraction 1.45 _at_ 632.8nm
• Extinction co-efficient 0 _at_ 632.8nm
• Polymer is fully cross-linked after a 150 oC
  (5min) or 150 oC (5min) 200 oC (60min) cure N2
  ambient
• Polymer contains some residual silanol groups
  after both tested cure procedures
• Bake conditions need to be optimized
• Scored Scotch tape adhesion test to silicon and
  SiO2
• 150 oC gt poor
• 150 oC 200 oC gt good
• Chemically and optically stable against hot water
  soak test (sample immersion in a 75 ºC water bath
  for 5 min)

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P1DX Summary of Results to Date (polymer B)

• Optical properties
• Index of refraction 1.41 _at_ 632.8nm
• Extinction coefficient 0 _at_ 632.8nm
• Polymer is fully cross-linked after a 150 oC
  (5min) or 150 oC (5min) 200 oC (60min) cure N2
  ambient
• Polymer contains minor residual silanols after
  150 oC cure, but is completely silanol free after
  the 150 oC 200 oC cure
• Minor cure condition optimization needed
• Scored Scotch tape adhesion test to silicon and
  SiO2
• 150 oC gt poor
• 150 oC 200 oC gt good
• Chemically and optically stable against hot water
  soak test (sample immersion in a 75 ºC water bath
  for 5 min)