MPW Design Introduction Course Part 5

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MPW Design Introduction Course - Part 5
Design - Part II

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Contents Design- Part II

• Masks description Pressure sensor example
• Die lay-out rules

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NOWEL mask (N-well)

• Straight polarity
• n-well implant in clear area
• No implant in the area to be dry etched

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BUCON mask(buried conductors)

• Reverse polarity
• B implant in dark area
• Inter-layer rules
• NOWEL

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BURES mask(buried resistors)

• Reverse polarity
• B-implant in dark area
• Note SURES also
• Inter-layer rules
• BUCON, NOWEL

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TIKOX mask (thick oxide)

• Straight polarity
• Insulating oxide between Si and metal

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SUCON mask (surface conductor)

• Reverse polarity
• B-implant in dark area
• Inter-layer rules
• BUCON, NOWEL
• BURES, TIKOX

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NOSUR mask (N-layer)

• Straight polarity
• P-implant in clear area
• Inter-layer rules
• BUCON, BURES
• TIKOX

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COHOL MCOND masks (contact holes and metal)

• Reverse / straight
• Inter-layer rules
• NOSUR, TIKOX
• COHOL, MCOND,
• SUCON, BUCON

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BETCH mask (backside etch)
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NOBOA mask (anodic bonding area)

• Straight polarity
• Inter-layer rules
• SUCON, SURES

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RETCH mask (release etch)

• Separate example !!
• Reverse polarity
• Inter-layer rules
• SUCON, SURES
• MCOND, TIKOX

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TOGE mask (top glass etch)

• Reverse polarity
• Mirrored!

TOGE
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BOGEF BOGEB masks (bottom glass etch)

• Reverse polarity
• BOGEB mirrored!
• Relatively high line-width

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Die lay-out rules (1)
Metal line contacts epi across entire die
uniform potential distribution during anisotropic
etching crossing over buried conductors thick
oxide
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Die lay-out rules (2)

• The bond pads area to the right of the chip
• Pitch and size of bond pads (no rule)
• Min. 120 µm wide anodic bonding area

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Die lay-out rules (3)

• Connection between bond pads and active area
  buried conductors
• Top glass etched over the bond pad area
• Note also substrate contact (not a rule)

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Summary
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Ch 5 Design Part II

• End of this chapter
• Questions or comments?