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Simulation of Nanoelectronic Devices: The Purdue NanoHub

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Title: Simulation of Nanoelectronic Devices: The Purdue NanoHub


1
Simulation of Nanoelectronic Devices The Purdue
NanoHub
  • Nikolaus Barge
  • Department of Physics Astronomy
  • Ball State University
  • Physics 483
  • Advisor Dr. Ron Cosby
  • Center for Computational Nanoscience

2
Outline
  • What is a nanoelectronic device?
  • Simulation and modeling
  • The NanoHub a general tour
  • Electronics tools at the NanHub
  • FETToy

3
What is a nanoelectronic device?
  • Why nanotechnology?
  • Limits on Scalability
  • Heat Dissipation
  • Tunneling
  • A really small device
  • U.S. National Nanotechnology Initiative
  • lt100 nm with novel properties. (nm 10-9m)
  • Examples of Nanometer-Scale Devices
  • Quantum-Dots
  • Single-electron Transistors
  • controlled electron tunneling to amplify current
  • Resonance Tunneling Device
  • quantum device use to control current

4
Simulation and modeling to design electronic
devices
  • The emergence of genuinely new phenomena at the
    nanoscale creates a great need for theory,
    modeling and large-scale computer simulation in
    order to understand the new nanoscale phenomena
    and regime.
  • -from the Project Summary of BSU CCN
  • Better understanding of parameters and
    constraints of devices
  • Builds a framework for experimentation

5
What is the NanoHub?
  • A website for online computing
  • A warehouse of research for the nanotechnology
    community
  • A place to learn and do research on new
    techniques new devices
  • Simulations in areas of Electronics, Chemistry,
    Electronic circuit design, and more
  • Powered by an interface which ships computing
    jobs to the other computers
  • PUNCH - A pool of machines available for jobs
    submitted through the nanoHUB

6
The NanoHub a general tour
  • www.Nanohub.org
  • www.Nanohub.org

7
Electronics tools
  • CNTBands
  • Computes E(k) and Density-Of-States (DOS) vs.
    Energy for Carbon Nanotubes.
  • FETToy
  • Analytically calculates the ballistic I-V of a
    double gate ultra thin body MOSFET.
  • Huckel-IV2.0
  • Calculates Density of States, Transmission
    Function, Resistance and Conductance Spectrum of
    Molecular Systems.
  • MolCToy
  • A collection of simple theoretical models of the
    conduction through individual molecules between
    two contacts.
  • NanoMOS 2.5
  • Simulates nanoscale DG and SG SOI MOSFETs using
    classical, quantum, or drift-diffusion transport.
  • Schred
  • Self-consistently solves the 1D Schrodinger and
    the 1D Poisson equation for a MOS or SOS
    structure.
  • SETE
  • Computes the equilibrium electronic structure of
    a GaAs- AlGaAs two-dimensional electron gas
    heterostructure with surface electrostatic gates.
  • TBGreen
  • Calculates the transmission and reflection
    coefficient from mode 1 -gt mode 1 in a
    T-structure.
  • TunProb
  • 1-D Electron Tunneling Transmission Probability
    Tool.

8
FETToy
  • FETToy 2.0
  • A set of Matlab scripts that calculate the I-V
    characteristics for
  • conventional MOSFETs
  • Nanowire MOSFETs
  • Carbon NanoTube MOSFETs
  • Simulation Outputs
  • Linear plot of Id vs. Vgs at low and high Vds
  • Logarithmic plot of Id vs. Vgs at low and high
    Vds
  • Plot of Id vs. Vds at different Vgs
  • Linear plot of Mobile Charge vs. Vgs at low and
    high Vds
  • Logarithmic plot of Mobile Charge vs. Vgs at low
    and high Vds
  • Plot of Mobile Charge vs. Vds at different Vgs
  • Plot of Quamtum Capacitance vs. Vgs at low and
    high Vds
  • Plot of Injection Velocity vs. Vgs at high Vds

9
FETToy Run Screen
10
Simulation In Progress
11
Output
12
Output continued . . .
13
Summary
  • What is a nanoelectronic device? very small
    devices to ovecome limits on scalability
  • The NanoHub - A website for online computing and
    education in nanoscience
  • Electronics tools 9 availble modeling,
    computational, and simulation programs
  • FETToy an example of simulated nantechnology
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