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A few notes for your design

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When each stage bears the same effort: Minimum path ... o. l. t. a. g. e [V] A B. A B. A,B. A. B. Still ratioed since sizing of PMOS/NMOS critical to function ... – PowerPoint PPT presentation

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Title: A few notes for your design


1
A few notes for your design
  • Finger and multiplier in schematic design
  • Parametric analysis
  • Monte-Carlo analysis

2
Multi-Fingered Transistors
One finger
Two fingers (folded)
Less diffusion capacitance
3
Digital Integrated CircuitsA Design Perspective
Jan M. Rabaey Anantha Chandrakasan Borivoje
Nikolic
Designing CombinationalLogic Circuits
4
Multistage Networks
Stage effort hi gi fi Path electrical effort
F Cout / Cin Path logical effort G
g1g2gN Path effort H GF Path delay D Sdi
Spi Shi
5
Optimum Effort per Stage
When each stage bears the same effort
Stage efforts g1f1 g2f2 gNfN
Effective fanout of each stage
Minimum path delay
6
Example Optimize Path
g1 1
g4 1
g2 5/3
g3 5/3
Effective fanout, F 5 G 25/9 H GF125/9
13.9 h 1.93 f1h/g1.93 f21.933/51.16 f31
.16 f41.93 (f1 effective fanout for the first
stage) a f1g1/g21.16 (of minimum-size
3-input NAND gate) (ag2f1g11) b
f1f2g1/g3 1.34 (of minimum-size 2-input NOR
gate) (bg3f2g2a) c f1f2f3g1/g4
2.59 (of minimum-size inverter)
7
Add Branching Effort
Branching effort
A parameter used to account for how much sizing
is attributed to the critical path
8
Multistage Networks
Stage effort hi gi fi Path electrical effort
F Cout / Cin Path logical effort G
g1g2gN Branching effort B b1b2bN Path
effort H GFB Path delay D Sdi Spi Shi
9
Example 8-input AND
10
Optimal Number of Stages
For a given load, and given input capacitance of
the first gate Find optimal number of stages and
optimal sizing
Substitute best stage effort
best number of stages N log4H
11
Method of Logical Effort
  • Compute the path effort H GFB
  • Find the best number of stages N log4H
  • Compute the stage effort h H1/N
  • Sketch the path with this number of stages
  • Work from either end, find sizes
  • Reference Sutherland, Sproull, Harris, Logical
    Effort, Morgan-Kaufmann, 1999.

12
Summary
13
Power consumption of static gates
  • It is a strong function of transistor sizes
    (which affects physical capacitance), input and
    output rise and fall time, device thresholds,
    temperature and switching activity.
  • Switching activity is a strong function of logic
    function to be implemented (nature of the gate),
    also input signal statistics such as inter-signal
    dependency.
  • Estimate switching activity for the overall chip
    is a very difficult task.
  • eg. For NOR gate, PA, PB the probabilities that
    input A and B stays at 1. Transition probability
    is then
  • ?0-gt1 1-(1-PA)(1-PB) (1-PA)(1-PB)

14
Complementary MOS Properties
  • Full rail-to-rail swing high noise margins
  • Logic levels not dependent upon the relative
    device sizes ratioless
  • Always a path to Vdd or Gnd in steady state low
    output impedance
  • Extremely high input resistance nearly zero
    steady-state input current
  • No direct path steady state between power and
    ground no static power dissipation
  • Propagation delay as function of load capacitance
    and resistance of transistors

15
Summary Static Complementary Gates
  • Static CMOS Complementary Gates is highly
    robust, scalable and easy to be designed.
  • One possible drawback is 2N number of
    transistors to implement an N-input logic
    function.
  • Another drawback is that parasitic capacitance
    is significant (driving two devices for fan-in
    and fan-out)
  • This opens the door for alternative logic design
    styles (either simpler or faster)

16
Ratioed Logic
Static/dynamic Ratioed/ratioless Complementary/non
-complementary
17
Ratioed Logic
18
Ratioed Logic
In ratioed logic, the entire PUN is replaced with
a single unconditional load device that pulls up
the output for logic 1
Not zero!!
19
Active Loads
Voltage swing now depend on the ratio of
NMOS/PMOS (in contrast to ratioless complementary
logic), so named ratioed
20
Pseudo-NMOS
Linear region
21
Pseudo-NMOS inverter VTC
Fix W/L2 for NMOS transistor
22
Ratioed logic with better loads
  • It is possible to create a ratioed logic that
    completely eliminates static currents and
    provides rail-to-rail swing
  • Such logic combines two concepts differential
    logic and positive feedback (make sure that load
    device is turned off when not needed)
  • An example of such a logic family is called DCVSL

23
Improved Loads
Both the logic and its inverse are simultaneously
implemented
24
DCVSL Example
It is possible to share transistors among the two
pull-down networks. DCVSL gives rail-to-rail
swing and eliminates static power dissipation.
But short-circuit power may be a problem.
25
DCVSL Transient Response
Delay In-gtout 197ps In-gtout 321ps VS 200ps for
Static MOS
Still ratioed since sizing of PMOS/NMOS critical
to function Short-circuit path due to
simultaneous on of PMOS/NMOS
26
Pass-TransistorLogic
27
Pass-Transistor Logic
Allow inputs to drive source/drain terminals as
well as gate terminals
28
Example AND Gate
NMOS only
Is B redundant?
29
NMOS-Only Logic
Unfortunately, NMOS passes strong 0 but weak 1
(the situation is even worsened by body effect)
Avoid cascading multiple pass-logic without
buffering!!!
30
NMOS-only Switch
V
V
does not pull up to 2.5V, but 2.5V -
TN
B
Though smaller voltage swing causes smaller
dynamic power consumption, threshold voltage loss
causes
static power consumption of following inverters
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